Silansys engaged with an industry leading ASIC
supplier to develop a next generation Gigabit Ethernet AFE
in TSMC 0.13um. Silansys played a lead role in the development
which was functional to the applicable IEEE standard on 1st
silicon:
Project Management
(5 design sites including Silansys, customer & other
contractor)
Developed new
architecture for Rx to improve noise immunity, reduce power
Lead Top-Level
AFE Verification
Designed Filtering
and all Common-mode control circuitry
Achieved Power
reduction goal through new Filter architecture and low-power
design.
